6
RF Device Data
Freescale Semiconductor
MRF7S18125BHR3 MRF7S18125BHSR3
TYPICAL CHARACTERISTICS
η
D,
DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
15 52
Gps
18 58VDD
= 28 Vdc
17.5
57
17
56
55
53
IRL
Figure 3. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout
= 125 Watts CW
?13
?7
?9
?11
?19
16
54
?15
?17
1930
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss, EVM and Drain
Efficiency versus Frequency @ Pout
= 57
Watts Avg.
Gps
17.5
0
60
IRL
17
50
40
16
30
20
15
10
G
ps
, POWER GAIN (dB)
EVM
EVM, ERROR VECTOR
MAGNITUDE (% rms)
VDD
= 28 Vdc, P
out
= 57 W Avg.
IDQ
= 1100 mA, EDGE Modulation
Pout, OUTPUT POWER (WATTS) CW
10 300100
13
18
IDQ
= 1650 mA
VDD
= 28 Vdc
f = 1960 MHz
17
15
14
Figure 5. Power Gain versus Output Power
G
ps
, POWER GAIN (dB)
16
825 mA
1375 mA
550 mA
Pout
= 125 W CW, I
DQ
= 1100 mA
100
?60
0
0.1 101
?20
?30
?40
?50
TWO?TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Two-Tone Spacing
IMD, INTERMODULATION DISTORTION (dBc)
IM7?U
IM3?L
IM5?U
IM5?L
IM7?L
IM3?U
VDD
= 28 Vdc, P
out
= 125 W (PEP)
IDQ
= 1100 mA, Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
16.5
15.5
1940 1950 1960 1970 1980 1990
16.5
15.5
14.5
IRL, INPUT RETURN LOSS (dB)
?15
?9
?11
?13
?21
?17
?19
1100 mA
?10
1930 1940 1950 1960 1970 1980 1990
ηD
ηD
η
D,
DRAIN
EFFICIENCY (%)
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